Schottky Diode Calculator

Calculate power losses and temperature effects for Schottky diodes in power applications.

Diode Parameters

Forward Voltage (Vf)

Forward Current (If)

Reverse Voltage (Vr)

Reverse Leakage (Ir)

Junction Temperature

Duty Cycle

Total Power Loss

1.027 W

Vf at Tj

250 mV

Conduction Loss

0.625 W

Leakage at Tj

18102 uA

Leakage Loss

362.04 mW

Design Notes

Schottky diodes have lower Vf than silicon diodes but higher leakage. At 100C, leakage is 181.0x the 25C value. Ensure thermal runaway is avoided.

Schottky Diode Characteristics

Schottky diodes use a metal-semiconductor junction instead of a p-n junction. Benefits include lower forward voltage (0.2-0.5V vs 0.7V for silicon), faster switching (no minority carrier storage), and no reverse recovery loss. However, they have higher leakage current that increases with temperature.

Ploss = Vf x If x D + Vr x Ir x (1 - D)

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Editorial Note

MyCalcBuddy Editorial Team

This page is maintained as an educational calculator reference.

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Formula Source: Standard Mathematical References

by Various

ðŸ”„Last reviewed: May 2026

âœ“Formula checks are based on standard references and internal QA review.