Schottky Diode Calculator
Calculate power losses and temperature effects for Schottky diodes in power applications.
Diode Parameters
V
A
V
uA
C
%
Total Power Loss
1.027 W
Vf at Tj
250 mV
Conduction Loss
0.625 W
Leakage at Tj
18102 uA
Leakage Loss
362.04 mW
Design Notes
Schottky diodes have lower Vf than silicon diodes but higher leakage. At 100C, leakage is 181.0x the 25C value. Ensure thermal runaway is avoided.
Schottky Diode Characteristics
Schottky diodes use a metal-semiconductor junction instead of a p-n junction. Benefits include lower forward voltage (0.2-0.5V vs 0.7V for silicon), faster switching (no minority carrier storage), and no reverse recovery loss. However, they have higher leakage current that increases with temperature.
Ploss = Vf x If x D + Vr x Ir x (1 - D)