Dopant Concentration Calculator

Calculate dopant concentration and resistivity for semiconductors

Semiconductor Type:

Calculation Mode:

Resistivity (Ω·cm):

Mobility (cm²/V·s): (optional - uses default if blank)

Temperature (K):

About Semiconductor Doping

Doping adds impurity atoms to semiconductors to control carrier concentration. n-type doping (donors) adds electrons, while p-type doping (acceptors) adds holes.

Key Relationships:

σ = neμ → ρ = 1/(neμ)
EF - Ei = kT ln(n/ni)
np = ni² (mass action law)
LD = √(εkT/e²n) (Debye length)

Resistivity Ranges:

Heavily doped: < 0.01 Ω·cm
Moderately doped: 0.1 - 10 Ω·cm
Lightly doped: > 100 Ω·cm
Intrinsic Si: ~230,000 Ω·cm